Taiwan Semi’s new ESD protection devices are optimised for high-density electronics

Taiwan Semiconductor has introduced a new series of new ultra-small ESD protection devices optimised for wearables and other high-density electronic products. All DFN0603-packaged models in the 3.3V and 5.0V TESDx Series exceed the 8kV IEC61000-4-2 20kV contact discharge standard as well as IEC6100-4-5 4A peak pulse current, with margin. TESDx Series devices utilise Taiwan Semiconductor’s proprietary clamping cells to prevent overvoltage damage from ESD and lightning on control, power and data lines. Additionally, their industry’s lowest capacitance allows for full USB 3.0 data rates without compromise.

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Infineon expands its Bluetooth portfolio with eight new parts

Infineon has announced the expansion of its Bluetooth portfolio by eight new products in the AIROC CYW20829 Bluetooth Low Energy 5.4 microcontroller (MCU) family, featuring Systems-on-Chip (SoCs) and modules optimised for industrial, consumer, and automotive use cases. The high integration of the CYW20829 product family allows designers to reduce bill-of-material (BOM) cost and device footprint in a wide variety of applications, including PC accessories, low-energy audio, wearables, solar micro inverters, asset trackers, health and lifestyle, home automation and others. Product designers also benefit from Infineon’s development infrastructure and commitment to robust security, with support for secure boot and execution environments and cryptography acceleration to safeguard sensitive data.

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ROHM develops the industry’s smallest CMOS Op Amp for smartphones and IoT devices

ROHM has developed an ultra-compact 1.8V – 5V, rail-to-rail CMOS operational amplifier (op amp) – the TLR377GYZ. It is optimised for amplifying signals from sensors such as temperature, pressure, flow rate, used in smartphones, small IoT devices, and similar applications.

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Magnachip Unveils Its First 8th-Generation MXT LV MOSFET

Magnachip has introduced its proprietary Super-Short Channel FET II (SSCFET II) technology for the first time in the Company’s new 12V Dual N-channel MOSFET (MDWC12D024PERH). SSCFET II is Magnachip’s latest design technology that significantly reduces the channel length.

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