SDRAM halves power consumption compared to LPDDR4s says Alliance Memory

Battery life in portable electronics can be extended with the 8Gbit AS4C256M32MD4V-062BAN SDRAM, says Alliance Memory. The latest addition to its high speed, CMOS mobile low power SDRAMs is a LPDDR4X device, featuring on-chip error code correction (ECC).

The low voltage operation and fast clock speeds of the AS4C256M32MD4V-062BAN SDRAM, result in a reduction in power consumption of around 50 per cent, compared to LPDDR4 Devices, says Alliance Memory.

It is supplied in a 200-ball FBGA package for higher power efficiency, says the company. Low-voltage operation is 0.6V — compared to 1.1V for LPDDR4 SDRAMs and clock speeds up 1.6GHz for high transfer rates of 3.2Gbits per second. This increases efficiency for audio and high resolution video in embedded applications, says Alliance Memory.

The AS4C256M32MD4V-062BAN is organised as two channels per device, with individual channels consisting of eight banks of 16 bits. The component offers fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate.

Alliance Memory’s LPDDR4X SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions in high-bandwidth, high-performance memory system applications. This eliminates the need for costly redesigns and part requalification, points out the company.

The SDRAM is designed to increase battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, and other IoT devices using artificial intelligence (AI) and 5G technologies. For automotive applications — including advanced driver assistance systems (ADAS) — the AEC-Q100-qualified devices operate over a temperature range of -40 to +105 degrees C.

Samples and production quantities of the AS4C256M32MD4V-062BAN are available now, with lead times of 12 weeks.

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