MOSFETs contribute to higher efficiency and safer operation, says Rohm
Designed with an original insulation structure, the RA1C030LD 20V N-channel MOSFET is a compact device which is claimed to offer class-leading power dissipation in a small, thin end products.
The RA1C030LD is optimised for switching in small, thin devices, including smartphones and wearables such as wireless earbuds and other hearable equipment.
The power requirements of compact devices have resulted in larger batteries that reduce the space available for mounting components. At the same time, there is a limit to the size of the battery, so to ensure more efficient use of battery power the power loss of mounted components must be minimised, said Rohm.
To meet this need, the company has developed MOSFETs in wafer-level chip-size packages (WLCSP) that contribute to greater miniaturisation while significantly reducing wiring resistance (which has increased with conventional discrete processes).
The RA1C030LD is a compact MOSFET in a DSN1006-3 WLCSP measuring 1.0 x 0.6mm. It uses Rohm’s proprietary IC process to achieve low power dissipation together with greater miniaturisation, said Rohm. In terms of the figure of merit that expresses the relationship between conduction and switching losses (RDS(on) x Qgd), Rohm claimed this is an industry-leading 20 per cent lower than standard package products in the same package. This allows for a significantly smaller board area requirement with higher efficiency in a variety of compact devices.
The package structure provides insulated protection for the side walls (standard products in the same package have no protection, explained Rohm). This reduces the risk of shorts due to contact between components in compact devices that must resort to high density mounting due to space constraints, contributing to safer operation.
Rohm said that it will continue to develop products with even lower RDS(on) in smaller package sizes.
Rohm Semiconductor develops and manufactures a large product range from SiC diodes and MOSFETs, analogue ICs such as gate drivers and power management ICs to power transistors and diodes to passive components.
Production takes place in manufacturing plants in Japan, Germany, Korea, Malaysia, Thailand, the Philippines, and China. Rohm Semiconductor Europe has its head office near Dusseldorf serving EMEA (Europe, Middle East and Africa).