Infineon claims 1Mbit automotive-qualified serial F-RAM is an industry first
Infineon claims to offer the industry’s first 1Mbit automotive-qualified serial F-RAM. It has introduced two ferroelectric RAM (F-RAM) devices in 1Mbit and 4Mbit densities. The 1Mbit (CY15B201QN-50SXE) and 4Mbit (CY15B204QN-40SXE) are intended to meet demand for specialised data logging memories that instantly capture and reliably store critical data for decades and which are used in automotive event data recorders (EDRs).
The two F-RAMs are AEC-Q100 Grade 1-qualified and support an extended temperature range of -40 to +125 degrees C. They join Infineon’s portfolio of automotive F-RAM products ranging from 4kbit up to 16Mbit densities. The two new F-RAM devices have fast and highly reliable read/write performance at speeds up to 50MHz in SPI mode and up to 108MHz in quad SPI mode. They also have an endurance performance of 10 trillion read/write cycles to support data logging at 10 microsecond intervals for over 20 years.
Accounting for the increased demand, Ramesh Chettuvetty, vice president RAM Solutions at Infineon said that automotive industry is specifying the use of high-reliability non-volatile memories in airbag safety systems, along with engine control and battery management systems. “The demand for memory densities tailored to specific use cases has grown as the number of applications requiring data logging have increased,” he said.
The zero delay write capability of Exceleon F-RAM allows system data to be captured and recorded up to the last instant before an accident or other user-defined trigger event. Both new F-RAM devices operate from 1.8V to 3.6V and are supplied in a standard eigt-pin SOIC package. Infineon confirmed that its F-RAM is designed to retain data for more than 100 years after loss of power.
Infineon’s CY15B201QN-50SXE (1Mbit) and CY15B204QN-40SXE (4Mbit) Exceleon Auto F-RAM devices are now in volume production. Infineon also expects to release the quad SPI interface version of both devices by the end of this year.
